STGP30H65F说明书PDF资料贸易商意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STGP30H65F	文件：300 bytes Page：1 Pages	Trench gate field-stop IGBT, H series 600 V, 30 A high speed This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coeffi High speed switching\nTight parameters distribution\nSafe paralleling\nLow thermal resistance\nShort-circuit rated\n;	ST 意法半导体	ST
STGP30H65F	文件：1.05669 Mbytes Page：13 Pages	Low thermal resistance 文件：1.05669 Mbytes 页数：13 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGP30H65F	文件：100 bytes Page：1 Pages	Package：TO-220-3；包装：管件类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 650V 60A 260W TO-220AB	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGW30H65FB	文件：1.69367 Mbytes Page：20 Pages	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed 文件：1.69367 Mbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STGWT30H65FB	文件：1.69367 Mbytes Page：20 Pages	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed 文件：1.69367 Mbytes 页数：20 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多STGP30H65F供应商更新时间2025-12-13 14:15:00