STGW40V60DF

600 V、40 A超高速沟槽栅场截止V系列IGBT; • Maximum junction temperature: TJ = 175 °C \n• Tail-less switching off \n• VCE(sat) = 1.8 V (typ.) @ IC = 40 A \n• Tight parameters distribution \n• Safe paralleling \n• Low thermal resistance \n• Very fast soft recovery antiparallel diode;

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.\n\n

STGW40V60DF

丝印：GW40V60DF；Package：TO-247；Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

STGW40V60DF

Trench gate field-stop IGBT, V series

STGW40V60DF

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 80A 283W TO247

STGW60H65DFB

ST/意法
TO-247

ST/意法