Trench and Field Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.3V@IC=40A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries

文件：384.65 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：G40M120DF3；Package：TO-247；Trench gate field-stop IGBT, M series 1200 V, 40 A low loss

文件：1.036579 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

1200 V、40 A沟槽栅场截止低损耗M系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. • 10 μs of short-circuit withstand time \n• VCE(sat)= 1.85 V (typ.) @ IC= 40 A \n• Tight parameters distribution \n• Safer paralleling \n• Low thermal resistance \n• Soft and fast recovery antiparallel diode;

ST

意法半导体

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 80A 468W TO-247

STMICROELECTRONICS

意法半导体