丝印：G15H120DF2；Package：TO-247；Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high frequency conver

文件：832.25 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

1200 V、15 A高速沟槽栅场截止H系列IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, • Maximum junction temperature: TJ = 175 °C \n• High speed switching series \n• Minimized tail current \n• VCE(sat) = 2.1 V @ IC = 15 A \n• 5 μs minimum short circuit withstand time at TJ = 150 °C \n• Safe paralleling \n• Low thermal resistance \n• Very fast recovery antiparallel diode;

ST

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT H-SERIES 1200V 15A TO-247

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high frequency conver

文件：832.25 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体