30 A、600 V超快IGBT

This IGBT utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. • High current capability \n• Very soft ultra fast recovery antiparallel diode \n• High frequency operation up to 50 KHz;

ST

意法半导体

丝印：GW20NC60VD；Package：TO-247；N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency applications. General Features

文件：303.17 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 200W TO247

STMICROELECTRONICS

意法半导体

30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

文件：469.12 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

文件：469.12 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

30 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features • High frequency operation up to 50 kHz • Lower CRES / CIES ratio (no cross-conduction susceptibility) • High current capa

文件：469.12 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体