Ultra fast \"W\" series

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application. High frequency operation\nVery soft ultra fast recovery antiparallel diode\nLow C\nRES/C\nIES ratio (no cross-conduction susceptibility);

ST

意法半导体

N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH??IGBT

文件：312.92 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 125W TO220

STMICROELECTRONICS

意法半导体

19 A - 600 V - very fast IGBT

文件：318.68 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

19 A - 600 V - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ High frequency operation Applications ■ High frequency motor drives ■ SMPS and PFC i

文件：663.63 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

19 A - 600 V - very fast IGBTE[

文件：524.83 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体