首页 >STF30N65M5>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
STF30N65M5 | N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
STF30N65M5 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD짼PAK,TO-220FP,I짼PAK,TO-220,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •LowDrain-SourceOn-Resistance FEATURES •DrainCurrent–ID=22A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=139mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD짼PAK,TO-220FP,I짼PAK,TO-220,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD짼PAK,TO-220FP,I짼PAK,TO-220,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
N-channel650V,0.125廓,22A,MDmesh??VPowerMOSFETD짼PAK,TO-220FP,I짼PAK,TO-220,TO-247 Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |
详细参数
- 型号：
STF30N65M5
- 功能描述：
MOSFET POWER MOSFET N-CH 650V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2022 |
TO220F |
10 |
原厂原装正品,价格超越代理 |
询价 | ||
ST全系列 |
22+23+ |
TO-220F |
26687 |
绝对原装正品全新进口深圳现货 |
询价 | ||
23+ |
N/A |
49200 |
正品授权货源可靠 |
询价 | |||
STM原厂目录 |
23+ |
TO-220FP |
28500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
ST |
20+ |
TO-220F |
25000 |
全新原装现货,假一赔十 |
询价 | ||
ST |
21+ |
TO-220F |
66 |
原装现货假一赔十 |
询价 | ||
ST |
22+ |
TO-220F |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
S |
23+ |
TO-220FP |
10000 |
公司只做原装正品 |
询价 | ||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST/意法 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 |
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