isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) -RDS(on) =1.85Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.47 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 1000V - 1.60OHM - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH TM MOSFET

文件：293.19 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道1000V - 1.60Ohm - 6.5A - TO-220 - TO-220FP

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements • EXTREMELY HIGH dv/dt CAPABILITY \n• IMPROVED ESD CAPABILITY \n• 100% AVALANCHE RATED \n• VERY LOW INTRINSIC CAPACITANCE;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.85Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：298.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 1000V - 1.60OHM - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH TM MOSFET

文件：293.19 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体