STF45N65M5

N沟道650 V、0.067 Ohm典型值、35 A MDmesh M5功率MOSFET，TO-220FP封装; • Worldwide best RDS(on) * area \n• Higher VDSSrating and high dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.\n\n

STF45N65M5

N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STF45N65M5

isc N-Channel MOSFET Transistor

STF45N65M5

N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET

STFW45N65M5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.078Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STFW45N65M5

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=35A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=78mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingapp

STFW45N65M5

N-channel650V,35A,0.067廓typ.,MDmesh??VPowerMOSFETsinTO-3PF,TO-247andTO-247longleadspackages

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STL45N65M5

N-channel650V,0.075廓typ.,22.5AMDmesh??M5PowerMOSFETinaPowerFLAT??8x8HVpackage

Description ThisdeviceisanN-channelPowerMOSFET basedontheMDmesh™M5innovativevertical processtechnologycombinedwiththewellknownPowerMESH™horizontallayout.The resultingproductoffersextremelylowonresistance,makingitparticularlysuitablefor applicationsrequiringhig

STP45N65M5

N-channel650V,0.067typ.,35AMDmeshVPowerMOSFETinD2PAK,TO-220FPandTO-220packages

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STP45N65M5

N-channel650V,0.067ohmtyp.,35AMDmeshVPowerMOSFET