isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6A@ TC=25℃ ·Drain Source Voltage -VDSS=525V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.41 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220

文件：930.66 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in TO-220FP package

These devices are developed using the revolutionary N-channel SuperFREDmesh3™ technology. They associate all advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the FDmesh™ advanced technology.\n • 100% avalanche tested\n• Extremely high dv/dt capability\n• Gate charge minimized• Very low intrinsic capacitance\n• Improved diode reverse recovery characteristics\n• Zener-protected;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6A@ TC=25℃ ·Drain Source Voltage -VDSS=525V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 525 V, 0.95 ohm, 6 A, DPAK, TO-220FP, TO-220

文件：930.66 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体