N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.30413 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：313.49 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.56 Ohm典型值、7 A MDmesh M5功率MOSFET，TO-220FP封装

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and supe • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.30413 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 60mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching appl

文件：358.45 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 0.6Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.35 Kbytes 页数：2 Pages

ISC

无锡固电