首页 >STF5N62K3>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

STF5N62K3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:318.95 Kbytes 页数:2 Pages

ISC

无锡固电

STF5N62K3

N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件:1.1786 Mbytes 页数:19 Pages

STMICROELECTRONICS

意法半导体

STF5N62K3

N沟道620 V、1.28 Ohm典型值、4.2 A SuperMESH3(TM) 功率MOSFET,TO-220FP封装

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the m • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

意法半导体

STP5N62K3

N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件:1.1786 Mbytes 页数:19 Pages

STMICROELECTRONICS

意法半导体

STP5N62K3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:372.63 Kbytes 页数:2 Pages

ISC

无锡固电

STU5N62K3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:318.16 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • Package:

    TO-220FP

  • Grade:

    Industrial

  • VDSS(V):

    620

  • RDS(on)_max(@ VGS=10V)(Ω):

    1.6

  • Drain Current (Dc)_max(A):

    4.2

  • PTOT_max(W):

    25

  • Qg_typ(nC):

    26

供应商型号品牌批号封装库存备注价格
ST/意法
24+
NA
860000
明嘉莱只做原装正品现货
询价
ST/意法
25+
TO-220F
45000
ST/意法全新现货STF5N62K3即刻询购立享优惠#长期有排单订
询价
ST
1708+
?
14860
只做原装进口,假一罚十
询价
ST
25+23+
TO220
20046
绝对原装正品全新进口深圳现货
询价
三年内
1983
只做原装正品
询价
STM
25+
TO-220
1675
就找我吧!--邀您体验愉快问购元件!
询价
ST
24+
原厂正品
9240
原装现货 假一赔百
询价
22+
NA
980
加我QQ或微信咨询更多详细信息,
询价
ST
23+
TO-220属封
50000
全新原装正品现货,支持订货
询价
ST
22+
TO2203
9000
原厂渠道,现货配单
询价
更多STF5N62K3供应商 更新时间2025-10-12 9:28:00