isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.16 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.1786 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in IPAK package

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable f • 100% avalanche tested\n• Extremely high dv/dt capability\n• Very low intrinsic capacitance• Improved diode reverse recovery characteristics\n• Zener-protected;

ST

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10806 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.1786 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S)Power MOSFET

文件：1.10908 Mbytes 页数：10 Pages

VBSEMI

微碧半导体