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STF5N95K5

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:318.68 Kbytes 页数:2 Pages

ISC

无锡固电

STF5N95K5

Ultra-low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件:1.19706 Mbytes 页数:26 Pages

STMICROELECTRONICS

意法半导体

STF5N95K5

N沟道950 V、2 Ohm典型值、3.5 A MDmesh K5功率MOSFET,TO-220FP封装

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

STP5N95K5

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:371.94 Kbytes 页数:2 Pages

ISC

无锡固电

STP5N95K5

Ultra-low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件:1.19706 Mbytes 页数:26 Pages

STMICROELECTRONICS

意法半导体

STU5N95K5

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:317.03 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • Package:

    TO-220FP

  • Grade:

    Industrial

  • VDSS(V):

    950

  • RDS(on)_max(@ VGS=10V)(Ω):

    2.5

  • Drain Current (Dc)_max(A):

    3.5

  • PTOT_max(W):

    25

  • Qg_typ(nC):

    7

供应商型号品牌批号封装库存备注价格
ST/意法
25+
TO-220F
32000
ST/意法全新特价STF5N95K5即刻询购立享优惠#长期有货
询价
ST(意法半导体)
24+
TO-220F
7828
支持大陆交货,美金交易。原装现货库存。
询价
ST(意法)
24+
TO-220F(TO-220IS)
10458
原厂可订货,技术支持,直接渠道。可签保供合同
询价
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
询价
ST全系列
25+23+
TO-220F
25830
绝对原装正品全新进口深圳现货
询价
ST
17+
TO220
60000
保证进口原装可开17%增值税发票
询价
ST(意法半导体)
2447
TO-220F(TO-220IS)
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
询价
STM
25+
TO-220
1675
就找我吧!--邀您体验愉快问购元件!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
更多STF5N95K5供应商 更新时间2025-10-4 14:14:00