isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.95Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.45 Kbytes 页数：2 Pages

ISC

无锡固电

Low gate input resistance

文件：865.37 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.86 Ohm典型值、5 A MDmesh M2功率MOSFET，TO-220FP封装

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore sui • Extremely low gate charge \n• Lower RDS(on)x area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：310.76 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10918 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

Extremely low gate charge

文件：1.20522 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体