isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) -RDS(on) = 1.25Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

文件：1.22735 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N沟道950 V、1 Ohm典型值、9 A MDmesh K5功率MOSFET，TO-220FP封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency • Industry’s lowest RDS(on) on * area \n• Industry’s best figure of merit (FoM) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

文件：1.22735 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.87 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

文件：1.22735 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体