Silicon N Channel IGBT Application: Inverter

Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =

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IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=22A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC

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Silicon N Channel IGBT Application: Inverter

Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =

文件：171.47 Kbytes 页数：4 Pages

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Silicon N Channel IGBT Application: Inverter

Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =

文件：89.45 Kbytes 页数：8 Pages

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600 V - 22 A - IGBT Application: Inverter

Features • Short circuit withstand time (5 s typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =

文件：91.21 Kbytes 页数：8 Pages

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600V - 22A - IGBT Application: Inverter

Features • Short circuit withstand time (5 s typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed swi

文件：111.94 Kbytes 页数：10 Pages

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600V - 22A - IGBT Application: Inverter

Features • Short circuit withstand time (5 s typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed swi

文件：111.94 Kbytes 页数：10 Pages

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Silicon N Channel IGBT Application: Inverter

文件：88.45 Kbytes 页数：8 Pages

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600V - 22A - IGBT Application: Inverter

文件：106.4 Kbytes 页数：10 Pages

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600V - 22A - IGBT Application: Inverter

文件：106.24 Kbytes 页数：10 Pages

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