Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ● High speed switching: tr = 100 ns typ, tf = 180 ns typ ● Low leak current: ICES = 1 A max ● Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ

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Silicon N Channel IGBT High speed power switching

● Trench gate and thin wafer technology (G6H-II series)\n● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ\n● High speed switching: tr = 100 ns typ, tf = 180 ns typ\n● Low leak current: ICES = 1 A max\n● Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ;

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Trench gate and thin wafer technology

文件：159.37 Kbytes 页数：6 Pages

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Trench gate and thin wafer technology

文件：159.37 Kbytes 页数：6 Pages

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