| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RJP30H2 | Trench gate and thin wafer technology 文件：159.37 Kbytes 页数：6 Pages | RENESAS 瑞萨 | RENESAS | |
Silicon N Channel IGBT High speed power switching Features ● Trench gate and thin wafer technology (G6H-II series) ● Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ● High speed switching: tf = 100 ns typ, tf = 180 ns typ ● Low leak current: ICES = 1 A max 文件：166.25 Kbytes 页数：7 Pages | RENESAS 瑞萨 | RENESAS | ||
Trench gate and thin wafer technology 文件：159.37 Kbytes 页数：6 Pages | RENESAS 瑞萨 | RENESAS | ||
Trench gate and thin wafer technology 文件：159.37 Kbytes 页数：6 Pages | RENESAS 瑞萨 | RENESAS | ||
Trench gate and thin wafer technology 文件：159.37 Kbytes 页数：6 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel IGBT High speed power switching * Trench gate and thin wafer technology (G6H-II series)\n\n* Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ\n\n* High speed switching: tf = 100 ns typ, tf = 180 ns typ\n * Low leak current: ICES= 1 A max | Renesas 瑞萨 | Renesas | ||
Silicon N Channel IGBT High speed power switching | Renesas 瑞萨 | Renesas | ||
Trench gate and thin wafer technology | Renesas 瑞萨 | Renesas |
详细参数
- 型号：
RJP30H2
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
Silicon N Channel IGBT High speed power switching
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
7643 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
38 |
全新原装 货期两周 |
询价 | |||
RENESAS/瑞萨 |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
询价 | ||
RENESAS |
23+ |
TO-263 |
328 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS |
20+ |
TO-263 |
328 |
进口原装现货,假一赔十 |
询价 | ||
RENESAS |
25+ |
TO-263 |
8800 |
公司只做原装,详情请咨询 |
询价 | ||
RENESAS |
24+ |
TO-263 |
16900 |
原装正品现货支持实单 |
询价 | ||
RENESAS |
2511 |
TO-263 |
328 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
RENESAS |
24+ |
TO-263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
RENESAS |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
询价 |
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