RJP30H2

Trench gate and thin wafer technology

RJP30H2DPK-M0

Silicon N Channel IGBT High speed power switching

Features ●Trenchgateandthinwafertechnology(G6H-IIseries) ●Lowcollectortoemittersaturationvoltage:VCE(sat)=1.4Vtyp ●Highspeedswitching:tf=100nstyp,tf=180nstyp ●Lowleakcurrent:ICES=1Amax

RJP30H2DPK-M0-T2

Silicon N Channel IGBT High speed power switching;

* Trench gate and thin wafer technology (G6H-II series)\n\n*  Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ\n\n*  High speed switching: tf = 100 ns typ, tf = 180 ns typ\n *  Low leak current: ICES= 1 A max

RJP30H2A

Trench gate and thin wafer technology

RJP30H2DPK-M0

Trench gate and thin wafer technology

RJP30H2DPK-M0

Silicon N Channel IGBT High speed power switching;

RJP30H2DPK-M0-11

Trench gate and thin wafer technology;

RJP30H2DPK-M0-11

Trench gate and thin wafer technology