Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and

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Silicon N Channel IGBT High Speed Power Switching

文件：83.09 Kbytes 页数：7 Pages

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Package：SC-83；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 45A 122W LDPAK

Renesas Electronics America Inc

Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating an

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Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating an

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SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

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