RJP60D0DPK规格书应用电路供应价格瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
RJP60D0DPK	文件：84.57 Kbytes Page：7 Pages	Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating an 文件：84.57 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJP60D0DPK-00-T0	文件：84.57 Kbytes Page：7 Pages	Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating an 文件：84.57 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJP60D0DPK_15	文件：84.57 Kbytes Page：7 Pages	Silicon N Channel IGBT High Speed Power Switching 文件：84.57 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
RJP60D0DPK-00#T0	文件：100 bytes Page：1 Pages	Package：TO-220-3 整包；包装：管件类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 45A 140W TO-3P	Renesas Electronics America Inc	Renesas Electronics America Inc

更多RJP60D0DPK供应商更新时间2026-1-27 8:56:00