RJP60D0DPP-M0

Silicon N Channel IGBT High Speed Power Switching

SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplating

RJP60D0DPP-M0-T2

Silicon N Channel IGBT High Speed Power Switching

SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplating

RJP60D0DPP-M0_15

Silicon N Channel IGBT High Speed Power Switching

RJP60D0DPP-M0#T2

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 45A 35W TO-220FL

Renesas Electronics America Inc