Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating an

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Silicon N Channel IGBT Application: Inverter

Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =

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SOT323

罗姆

上传：深圳庞田科技有限公司

UMT3

ROHM/罗姆

上传：佛山市芯光达科技有限公司