Silicon N Channel IGBT High speed power switching

● Trench gate and thin wafer technology (G6H-II series)\n● High speed switching: tr =80 ns typ., tf = 150 ns typ.\n● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.\n● Low leak current: ICES = 1 A max.\n● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.\n● Isolated ;

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Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

文件：158.32 Kbytes 页数：7 Pages

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Silicon N Channel IGBT High speed power switching

* Trench gate and thin wafer technology (G6H-II series) * High speed switching: tr = 80 ns typ., tf = 150 ns typ. * Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. * Low leak current: ICES= 1 A max.

文件：157.56 Kbytes 页数：7 Pages

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Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 A max. ● Isolated package TO-220FL

文件：157.32 Kbytes 页数：7 Pages

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瑞萨

Silicon N Channel IGBT High speed power switching

* Trench gate and thin wafer technology (G6H-II series) * High speed switching: tr = 80 ns typ., tf = 150 ns typ. * Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. * Low leak current: ICES= 1 A max.

文件：157.56 Kbytes 页数：7 Pages

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