RF Power Field Effect Transistors

文件：708.91 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：486.47 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：662.89 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：708.91 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

文件：508.22 Kbytes 页数：13 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

文件：257.14 Kbytes 页数：16 Pages

MOTOROLA

摩托罗拉

520 MHz，35 W，12.5 V宽带射频功率LDMOS

The MRF1535NT1 and MRF1535FNT1 are designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. •Specified Performance @ 520 MHz, 12.5 VoltsOutput Power: 35 WattsPower Gain: 13.5 dBEfficiency: 55%\n•Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive\n•Excellent Thermal Stability\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n•Broadband–Full Power ;

恩XP

520 MHz, 35 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET

恩XP