520 MHz, 35 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs

OverviewReplaced by MRF1535NT1/FNT1. There are no form, fit or function changes with this part replacement. The MRF1535T1 and MRF1535FT1 are designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them i \n• Specified Performance @ 520 MHz, 12.5 Volts\nOutput Power: 35 Watts\n\tPower Gain: 10.0 dB\n\tEfficiency: 50%\n\n• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive\n\n• Excellent Thermal Stability\n\n• Characterized with Series Equivalent Large–Signal Impedance Parameters\n;

恩XP

RF Power Field Effect Transistors

文件：708.91 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：257.14 Kbytes 页数：16 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

文件：486.47 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：662.89 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：257.14 Kbytes 页数：16 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

文件：708.91 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：662.89 Kbytes 页数：19 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：486.47 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：257.14 Kbytes 页数：16 Pages

MOTOROLA

摩托罗拉