DirectFET

Power MOSFET

Description The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：241.84 Kbytes 页数：9 Pages

IRF

Ideal for CPU Core DC-DC Converters

文件：241.84 Kbytes 页数：9 Pages

IRF

Low-Voltage Analog Temperature Sensor in an SC70 Package

文件：114.42 Kbytes 页数：6 Pages

MAXIM

美信

Low-Voltage Analog Temperature Sensor in an SC70 Package

文件：114.42 Kbytes 页数：6 Pages

MAXIM

美信

Ultrahigh-Speed Switching Applications

General-Purpose Switching Device Applications Features • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting. • Excellent ON-resistance characteristic. • 1.5V driv

文件：43.88 Kbytes 页数：6 Pages

SANYO

三洋