Power MOSFET

Features • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting • Excellent ON-resistance characteristic • 1.5V drive

文件：342.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Ultrahigh-Speed Switching Applications

General-Purpose Switching Device Applications Features • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting. • Excellent ON-resistance characteristic. • 1.5V driv

文件：43.88 Kbytes 页数：6 Pages

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三洋

General-Purpose Switching Device Applications

文件：92.95 Kbytes 页数：7 Pages

SANYO

三洋

小信号 MOSFET，30V，0.35A，3.7Ω，-30V，-0.2A，10.4Ω，互补 MCPH6

MCH6613 是一款小信号 MOSFET，30V，0.35A，3.7Ω，-30V，-0.2A，10.4Ω，互补 MCPH6，用于通用开关设备应用。 • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel lowON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting\n• Excellent ON-resistance characteristic\n• 1.5V drive;

ONSEMI

安森美半导体

Power MOSFET

Features • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting • Excellent ON-resistance characteristic • 1.5V drive

文件：347.7 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET

Features • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting • Excellent ON-resistance characteristic • 1.5V drive

文件：342.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

文件：92.95 Kbytes 页数：7 Pages

SANYO

三洋