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KGF40N60KDA

KECFieldStopTrenchIGBTsofferlowswitchinglosses,highenergyefficiencyandshortcircuitruggedness.

KECKEC CORPORATION

KEC株式会社

KGF40N60PA

Highspeedswitching

KECKEC CORPORATION

KEC株式会社

KGT40N60KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式会社

MGY40N60

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtimesuchasMotorControlDriv

MotorolaMotorola, Inc

摩托罗拉

MGY40N60D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

MotorolaMotorola, Inc

摩托罗拉

NGTB40N60FLWG

IGBT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NGTB40N60IHLWG

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SGF40N60

HighSpeedSwitching

CO-PAKIGBT FEATURES *HighSpeedSwitching *LowSaturationVoltage :VCE(sat)=2.0V(@Ic=20A) *HighInputImpedance *CO-PAK,IGBTwithFRD :Trr=42nS(typ.) APPLICATIONS *AC&DCMotorcontrols *GeneralPurposeInverters *Robotics,ServoC

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGF40N60UF

Ultra-FastIGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFseriesprovideslowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features •HighSpeedSwitching •LowSa

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGF40N60UFD

HighSpeedSwitching

CO-PAKIGBT FEATURES *HighSpeedSwitching *LowSaturationVoltage :VCE(sat)=2.0V(@Ic=20A) *HighInputImpedance *CO-PAK,IGBTwithFRD :Trr=42nS(typ.) APPLICATIONS *AC&DCMotorcontrols *GeneralPurposeInverters *Robotics,ServoC

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60

Ultra-FastIGBT

GeneralDescription Fairchild®’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features •HighSpeedSwitching •LowSaturationVoltage:VCE(sat)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60

Ultra-FastIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60UF

Ultra-FastIGBT

GeneralDescription Fairchild®’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features •HighSpeedSwitching •LowSaturationVoltage:VCE(sat)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60UFD

Ultra-FastIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60UFD

Ultra-FastIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60UFDTU

Ultra-FastIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH40N60UFTU

SGH40N60UF600VPTIGBT

GeneralDescription Fairchild®’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features •HighSpeedSwitching •LowSaturationVoltage:VCE(sat)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGP40N60

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedsw

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGP40N60UF

Ultra-FastIGBT

GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedsw

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SiHFPS40N60K

EnhancedBodyDiodedV/dtCapability

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    IHW40N60R

  • 功能描述:

    IGBT 晶体管 IH SeriesRev Conduct IGBT Monolithic Body

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2020+
TO-247
22000
全新原装正品 现货库存 价格优势
询价
Infineon(英飞凌)
23+
标准封装
13753
原厂渠道供应,大量现货,原型号开票。
询价
INFINEO
16+
TO-247
36000
原装正品,优势库存81
询价
INFINEON/英飞凌
15+
TO-247
300
进口原装假一赔十支持含税
询价
INFINEON
2022+
TO-247
4000
原装原厂代理 可免费送样品
询价
Infineon(英飞凌)
23+
NA
7000
工厂现货!原装正品!
询价
INFINEON/英飞凌
21+23+
TO-247
5425
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
英飞凌
新批次
N/A
1500
询价
INFINEON
2017+
TO247
54785
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
INF
2020+
TO-247
300
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多IHW40N60R供应商 更新时间2024-5-2 11:04:00