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IKP20N60H3

分立式IGBT; • Low switching losses for high efficiency\n• Excellent Vce(sat)behavior thanks to the famous Infineon TRENCHSTOP™ technology\n• Fast switching behavior with low EMI emissions\n• Optimized diode for target applications, meaning further improvement in switching losses\n• Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour\n• Short circuit capability 5µs\n• Offering Tj(max)of 175°C\n• Packaged with and without freewheeling diode for increased design freedom\n\n优势:\n• Low switching and conduction losses\n• Very good EMI behavior\n• Can be used with a small gate resistor for reduced delay time and voltage overshoot\n• High current density\n• Best-in-class 600 V IGBT efficiency and EMI behavior\n;

High speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO220 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.\n

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IKP20N60H3

High speed IGBT in Trench and Fieldstop technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IKP20N60H3XKSA1

Package:TO-220-3;包装:管件 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 40A 170W TO220-3

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGB20N60H3

600Vhighspeedswitchingseriesthirdgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGP20N60H3

Highspeedswitchingseriesthirdgeneration

HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoH

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IGW20N60H3

HighspeedIGBTinTrenchandFieldstoptechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IKB20N60H3

HighspeedIGBTinTrenchandFieldstoptechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IKW20N60H3

IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IKW20N60H3

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology

Features: TRENCHSTOP™technologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceMode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

技术参数

  • Product Status:

    active and preferred

  • Green:

    yes

  • Halogen-free:

    yes

  • Switching Frequency min:

    20 kHz

  • Switching Frequency max:

    100 kHz

  • Technology:

    IGBT HighSpeed 3

  • Voltage Class max:

    600 V

  • IC @ 100° max:

    20 A

  • VCE(sat):

    1.95 V

  • Qualification:

    Industrial

  • Eon:

    0.45 mJ

  • Eoff Hard Switching:

    0.24 mJ

  • IF max:

    20 A

  • Qrr:

    390 nC

  • Driver Selection:

    5546d4694909da48014909dc0f5e0238=IGBT

  • Type:

    IGBT + Diode

  • Package name:

    PG-TO220-3

  • td(on):

    16 ns

  • tr:

    20 ns

  • td(off):

    194 ns

  • tf:

    11 ns

  • QGate:

    120 nC

  • IC @ 25° max:

    40 A

  • IFpuls max:

    80 A

  • VF:

    1.65 V

  • Irrm:

    11 A

  • ICpuls max:

    80 A

  • tSC:

    5 µs

  • Soft Switching:

    no

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
22+
TO-220
15000
原装正品,支持实单。
询价
Infineon(英飞凌)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
询价
INFINEON/英飞凌
24+
TO-220
17243
原装进口假一罚十
询价
Infineon(英飞凌)
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
TI
23+
QFP
15600
优势原装现货假一赔十
询价
INFINEON
24+
N/A
8000
全新原装正品,现货销售
询价
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
INFINEON/英飞凌
25+
TO-220
17200
全新原装正品支持含税
询价
INFINEON
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
英飞翎
20+
D2PAK(TO-263)
36900
原装优势主营型号-可开原型号增税票
询价
更多IKP20N60H3供应商 更新时间2025-7-28 16:16:00