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IRFPS40N60K

HEXFET-RPowerMOSFET

IRF

International Rectifier

IRFPS40N60KPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IXFK40N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK40N60

HiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFN40N60

HiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXGH40N60

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C) Applications ACmo

IXYS

IXYS Corporation

IXGH40N60A

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C) Applications ACmo

IXYS

IXYS Corporation

IXGH40N60B

HiPerFASTIGBT

HiPerFAST™IGBT LightspeedSeries

IXYS

IXYS Corporation

IXGH40N60C

HiPerFASTIGBTLightspeedSeries

Features InternationalstandardpackagesJEDECTO-247andsurfacemountableTO-268 Highcurrenthandlingcapability LatestgenerationHDMOS™process MOSGateturn-on -drivesimplicity Applications PFCcircuits Uninterruptiblepowersupplies(UPS) Switched-modeandr

IXYS

IXYS Corporation

IXGM40N60

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS™process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C) Applications ACmo

IXYS

IXYS Corporation

详细参数

  • 型号:

    IHW40N60R

  • 功能描述:

    IGBT 晶体管 IH SeriesRev Conduct IGBT Monolithic Body

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2020+
TO-247
22000
全新原装正品 现货库存 价格优势
询价
Infineon(英飞凌)
24+
标准封装
13753
原厂渠道供应,大量现货,原型号开票。
询价
INFINEO
16+
TO-247
36000
原装正品,优势库存81
询价
INFINEON
24+
TO-247
4000
原装原厂代理 可免费送样品
询价
Infineon(英飞凌)
23+
NA
7000
工厂现货!原装正品!
询价
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
INFINEON/英飞凌
08+
TO-247
9
原装进口无铅现货
询价
INFINEON/英飞凌
15+
TO-247
300
进口原装假一赔十支持含税
询价
INF
2020+
TO-247
300
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
INFINEON
2016+
TO-247
6528
房间原装进口现货假一赔十
询价
更多IHW40N60R供应商 更新时间2025-5-24 11:04:00