Low VCE(sat) IGBT, High speed IGBT

Features International standard packages 2nd generation HDMOS™ process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) Applications AC mo

文件：106.52 Kbytes 页数：4 Pages

IXYS

艾赛斯

Low VCE(sat) IGBT High speed IGBT

International standard packages\n2nd generation HDMOS™ process\nLow VCE(sat)\n  - for low on-state conduction losses\nHigh current handling capability\nMOS Gate turn-on\n  - drive simplicity\nVoltage rating guaranteed at high temperature (125°C)Applications\nAC motor speed control\nDC servo and robo;

Littelfuse

力特

Package：TO-204AE；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：POWER MOSFET TO-3

IXYS

艾赛斯

Low VCE(sat) IGBT, High speed IGBT

Features International standard packages 2nd generation HDMOS™ process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) Applications AC mo

文件：106.52 Kbytes 页数：4 Pages

IXYS

艾赛斯

Low VCE(sat) IGBT, High speed IGBT

Littelfuse

力特

Package：TO-204AA，TO-3；包装：托盘 类别：分立半导体产品 晶体管 - IGBT - 模块 描述：IGBT MODULE 600V 75A 250W TO204

IXYS

艾赛斯