首页 >IXGP10N50A>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
10Amps,500VoltsN-CHANNELPOWERMOSFET DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
10A,500VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
10A500VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
10A500VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
500VN-ChannelMOSFETImproveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELJFETFORELECTRETCONDENSERMICROPHONE | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=10A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max) •100avalanchetested •MinimumLot-to- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500V,10AN-ChannelMOSFETwithFastRecoveryDiode GeneralDescription TheAOTF10N50FDhasbeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilitythispartc | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFET500V,9A,0.85廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMOSFET500V,9A,0.85廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelUniFETTMUltraFRFETTMMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HighVoltagePowerSupplies | TDKTDK Corporation 东电化（中国）投资有限公司 | TDK | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.61Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelQFETRFRFETRMOSFET500V,10A,610m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFETImproveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
500VN-ChannelMOSFETImproveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号：
IXGP10N50A
- 功能描述：
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 20A I(C) | TO-220AB
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO220 |
5000 |
只做原装公司现货 |
询价 | ||
23+ |
N/A |
35700 |
正品授权货源可靠 |
询价 | |||
IXYS |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IR |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS/艾赛斯 |
21+ |
TO220 |
10000 |
原装现货假一罚十 |
询价 | ||
IXYS/艾赛斯 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
IXYS/艾赛斯 |
21+ROHS |
TO-TO-220 |
53518 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
IXYS/艾赛斯 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 |
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