IXGP7N60C

HiPerFAST IGBT Lightspeed Series

Features •Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Uninterruptiblepowersupplies(UPS) •Switc

IXGP7N60C

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 54W TO220

IXGP7N60CD1

HiPerFAST IGBT with Diode Lightspeed Series

Features •Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Uninterruptiblepowersupplies(UPS) •Switc

IXGP7N60CD1

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 14A 75W TO220

IXTA7N60P

iscN-ChannelMOSFETTransistor

IXTA7N60P

N-ChannelEnhancementModeAvalancheRated

IXTA7N60PM

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Plasticovermoldedtabforelectrical isolation •Internationalstandardpackage •Avanlancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings Appli

IXTP7N60P

N-ChannelEnhancementModeAvalancheRated

IXTP7N60P

iscN-ChannelMOSFETTransistor

IXTP7N60PM

iscN-ChannelMOSFETTransistor

•FEATURES •DrainSourceVoltage- :VDSS=600V(Min) •Staticdrain-sourceon-resistance :RDS(on)≤1.1Ω@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATION •DC/DCConverter •Idealforhigh-frequenc