PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

HiPerFASTTM IGBT (Electrically Isolated Backside)

文件：58.53 Kbytes 页数：2 Pages

IXYS

艾赛斯

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 70A 200W ISOPLUS247

IXYS

艾赛斯

HiPerFASTTM IGBT with Diode

文件：99.01 Kbytes 页数：2 Pages

IXYS

艾赛斯

IGBT with Diode PLUS247TM package Short Circuit SOA Capability

Short Circuit SOA Capability Features • International standard packages • Guaranteed Short Circuit SOA capability • Medium frequency IGBT and antiparallel FRED in one package • Latest generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gat

文件：50.42 Kbytes 页数：2 Pages

IXYS

艾赛斯

IGBT with Diode PLUS247TM package Short Circuit SOA Capability

Short Circuit SOA Capability Features • International standard packages • Guaranteed Short Circuit SOA capability • Medium frequency IGBT and antiparallel FRED in one package • Latest generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gat

文件：50.42 Kbytes 页数：2 Pages

IXYS

艾赛斯