PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

HiPerFASTTM IGBT with Diode

文件：99.01 Kbytes 页数：2 Pages

IXYS

艾赛斯

Package：TO-247-3 变式；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 75A 250W PLUS247

IXYS

艾赛斯

IGBT with Diode PLUS247TM package Short Circuit SOA Capability

Short Circuit SOA Capability Features • International standard packages • Guaranteed Short Circuit SOA capability • Medium frequency IGBT and antiparallel FRED in one package • Latest generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gat

文件：50.42 Kbytes 页数：2 Pages

IXYS

艾赛斯

IGBT with Diode PLUS247TM package Short Circuit SOA Capability

Short Circuit SOA Capability Features • International standard packages • Guaranteed Short Circuit SOA capability • Medium frequency IGBT and antiparallel FRED in one package • Latest generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • MOS Gat

文件：50.42 Kbytes 页数：2 Pages

IXYS

艾赛斯

IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

Short Circuit SOA Capability Features ● DCB Isolated mounting tab ● Meets TO-247AD package Outline ● High current handling capability ● Latest generation HDMOSTM process ● MOS Gate turn-on - drive simplicity Applications ● Uninterruptible power supplies (UPS) ● Switched-mode and reson

文件：39.27 Kbytes 页数：2 Pages

IXYS

艾赛斯