丝印：AA1；Package：PG-TSON-4；CoolGaNTM Transistor 100 V G3

Features • Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse conduction capability • Low gate charge, low output charge • Qualified according to JEDEC for target applications

文件：852.22 Kbytes 页数：8 Pages

Infineon

英飞凌

CoolGaN ™晶体管 100 V G3，PQFN 3x3，5 mΩ

• 100 V e-mode power transistor\n• Dual-side cooled package\n• No reverse recovery charge\n• Reverse conduction capability\n• Low gate charge, low output charge\n• Qualified according to JEDEC\n\n优势:\n• Best-in-class power density\n• Highest efficiency\n• Improved thermal management\n• Enabling smal;

Infineon

英飞凌

TO-263

st

上传：深圳市汇创佳电子科技有限公司

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司