650 V、50 A IGBT，带反并联二极管，采用 TO-263 封装

The 650 V, 50 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single  IGBT, redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high eff • 650 V breakthrough voltage\n• Compared to Infineon’s High Speed 3 family\n• Factor 2.5 lower Qg\n• Factor 2 reduction in switching losses\n• 200mV reduction in VCEsat\n• Co-packed with Infineon’s new Rapid Si-diode technology\n• Low COES/EOSS\n• Mild positive temperature coefficient VCEsat\n• Temp;

Infineon

英飞凌

High speed switching series fifth generation

文件：1.37058 Mbytes 页数：14 Pages

Infineon

英飞凌

650V IGBT high speed switching series fifth generation

文件：2.00308 Mbytes 页数：14 Pages

Infineon

英飞凌

High speed 5 IGBT in TRENCHSTOP 5 technology

文件：2.1846 Mbytes 页数：14 Pages

Infineon

英飞凌

Highspeed5IGBTinTRENCHSTOPTM5technology

FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplati

文件：2.00184 Mbytes 页数：14 Pages

Infineon

英飞凌