High Speed IGBT3 Chip

Features: • 650V Trench & Field Stop technology • high speed switching series third generation • low VCE(sat) • low EMI • low turn-off losses • positive temperature coefficient • qualified according to JEDEC for target applications Recommended for: • discrete components and modules Appli

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INFINEON

英飞凌

IGBT裸片(400V-1200V)

Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses. • Positive temperature coefficient\n• Easy paralleling\n\n优势:;

Infineon

英飞凌

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

IGBT

INFINEON/英飞凌

上传：深圳市赛特兴科技有限公司