High Speed IGBT3 Chip

Features: • 650V Trench & Field Stop technology • high speed switching series third generation • low VCE(sat) • low EMI • low turn-off losses • positive temperature coefficient • qualified according to JEDEC for target applications Recommended for: • discrete components and modules Appli

文件：226.46 Kbytes 页数：4 Pages

INFINEON

英飞凌

IGBT裸片(400V-1200V)

Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses. • Positive temperature coefficient\n• Easy paralleling\n\n优势:;

Infineon

英飞凌

Schottky Barrier Diode

文件：1.05893 Mbytes 页数：5 Pages

ROHM

罗姆

Schottky Barrier Diode

文件：741.72 Kbytes 页数：9 Pages

ROHM

罗姆

650V trench & field stop technology

文件：330.91 Kbytes 页数：9 Pages

INFINEON

英飞凌