TRENCHSTOPTM IGBT4 Low Power Chip

Features: • 1200V trench & field stop technology • Low switching losses • Positive temperature coefficient • Easy paralleling Recommended for: • Low / medium power modules Applications: • Low / medium power drives

文件：335.81 Kbytes 页数：9 Pages

Infineon

英飞凌

1200V功率IGBT芯片

The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. • 1200V TRENCHSTOP™ and Fieldstop technology\n• Low switching losses\n• Positive temperature coefficient\n• Easy paralleling\n\n优势:;

Infineon

英飞凌

Package：模具；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 75A DIE

Infineon

英飞凌

1200V trench & field stop technology

Features: • 1200V trench & field stop technology • Low switching losses • Soft turn off • Positive temperature coefficient • Easy paralleling Recommended for: • Medium power modules Applications: • Medium power drives

文件：336.63 Kbytes 页数：9 Pages

Infineon

英飞凌

1200V trench & field stop technology

文件：332.85 Kbytes 页数：9 Pages

Infineon

英飞凌