IGC54T65R3QE规格书应用电路供应价格英飞凌-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IGC54T65R3QE	文件：84.01 Kbytes Page：4 Pages	650V Trench & Field Stop technology Features: • 650V Trench & Field Stop technology • high speed switching series third generation • low VCE(sat) • low EMI • low turn-off losses • positive temperature coefficient • qualified according to JEDEC for target applications Recommended for: • discrete components and modules Appli 文件：84.01 Kbytes 页数：4 Pages	Infineon 英飞凌	Infineon
IGC54T65R3QE	文件：300 bytes Page：1 Pages	IGBT 裸片 Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses. • Positive temperature coefficient\n• Easy paralleling\n\n优势:;	Infineon 英飞凌	Infineon
SIGC54T65R3E	文件：348.13 Kbytes Page：9 Pages	650V trench & field stop technology 文件：348.13 Kbytes 页数：9 Pages	Infineon 英飞凌	Infineon
IGCM04F60GA	文件：0 bytes Page：0 Pages	INFINEON/英飞凌 IPM模块	INFINEON/英飞凌上传：深圳市正纳电子有限公司	INFINEON/英飞凌
IGCM06F60GA	文件：0 bytes Page：0 Pages	INFINEON/英飞凌 IPM模块	INFINEON/英飞凌上传：深圳市正纳电子有限公司	INFINEON/英飞凌

更多IGC54T65R3QE供应商更新时间2025-10-11 15:01:00