TRENCHSTOPTM IGBT4 Medium Power Chip

Features:  1200V trench & field stop technology  Low switching losses  Soft turn off  Positive temperature coefficient  Easy paralleling

文件：329.79 Kbytes 页数：9 Pages

Infineon

英飞凌

IGBT 裸片

我们的 TRENCHSTOP™ IGBT 结合了独特的沟槽和场截止技术，是行业的标杆 • 1200 V TRENCHSTOP ™技术\n • 1200 V fieldstop 技术\n • 低开关损耗\n • 软关断\n • 正温度系数\n • 易于并联;

Infineon

英飞凌

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

文件：201.5 Kbytes 页数：10 Pages

Infineon

英飞凌

1200V trench & field stop technology

文件：343.63 Kbytes 页数：9 Pages

Infineon

英飞凌