1200V功率IGBT芯片

The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. • 1200V TRENCHSTOP™ and Fieldstop technology\n• Low switching losses\n• Positive temperature coefficient\n• Easy paralleling\n\n优势:;

Infineon

英飞凌

TRENCHSTOPTM IGBT4 Low Power Chip

Features: • 1200V trench & field stop technology • Low switching losses • Positive temperature coefficient • Easy paralleling Recommended for: • Low / medium power modules Applications: • Low / medium power drives

文件：362.71 Kbytes 页数：9 Pages

Infineon

英飞凌

Package：模具；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 10A SAWN ON FOIL

Infineon

英飞凌

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司