High Speed IGBT3 Chip

Features: • 650V Trench & Field Stop technology • high speed switching series third generation • low VCE(sat) • low EMI • low turn-off losses • positive temperature coefficient • qualified according to JEDEC for target applications Recommended for: • discrete components and modules Appli

文件：70.55 Kbytes 页数：4 Pages

INFINEON

英飞凌

IGBT 裸片

Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses. • Positive temperature coefficient\n• Easy paralleling\n\n优势:;

Infineon

英飞凌

650V Field Stop IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness. This device is for motor control. Features ■ High ruggedness for motor control ■ VCE(sat) positive temperature coeffi

文件：649.99 Kbytes 页数：8 Pages

MGCHIP

650V trench & field stop technology

文件：335.08 Kbytes 页数：9 Pages

INFINEON

英飞凌