Integrated 3 Phase Gate Driver Chip product

1.1 Features  Thin-film-SOI-technology  Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology  Maximum blocking voltage +600V  Power supply of the high side drivers via boot strap  Integrated bootstrap functionality  Separate control circ

文件：539.97 Kbytes 页数：17 Pages

Infineon

英飞凌

600V applications offering:

Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses • Smooth switching performance leading to low EMI levels • Very tight parameter distribution • Operating range of 1 to 20kHz • Maximum junction temper

文件：100.87 Kbytes 页数：6 Pages

Infineon

英飞凌

IGBT裸片(400V-1200V)

The reverse conducting TRENCHSTOP™ IGBT RC-Serie with the unique TRENCHSTOP™ and Fieldstop technology  for hard switching applications.\n IGBT chip with monolithically integrated diode in packages offering space saving advantage. • Monolithical diode included\n• Optimized V CE(sat) and V F for low conduction losses\n• Smooth switching performance leading to low EMI levels\n• Very tight parameter distribution\n• Operating range of 1 to 20kHz\n• Maximum junction temperature 175°C\n• Short circuit capability of 5μs\n\n优势:;

Infineon

英飞凌

INFINEON/英飞凌
IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

INFINEON/英飞凌
IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司