丝印：25SD1；Package：PG-TSON-6；CoolGaNTM Transistor 80 V G3

Features • Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse conduction capability • Low gate charge, low output charge • Qualified according to JEDEC for target applications

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INFINEON

英飞凌

CoolGaN ™晶体管 80 V G3，采用 PQFN 3x5、1.9 mΩ

• 80 V e-mode power transistor\n• Dual-side cooled package\n• No reverse recovery charge\n• Reverse conduction capability\n• Low gate charge, low output charge\n• Qualified according to JEDEC\n\n优势:\n• Best-in-class power density\n• Highest efficiency\n• Improved thermal management\n• Enabling small;

Infineon

英飞凌

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

IGBT

INFINEON/英飞凌

上传：深圳市赛特兴科技有限公司