丝印：GT025N06；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AD5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.024349 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT025N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AM uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

文件：674.69 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT025N06；Package：TO-263-6L；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AM6 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：841.27 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT025N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AMA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters l Synchronous Rectification

文件：948.09 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT025N06；Package：TO-247；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AQ uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

文件：911.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT025N06；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

文件：909.2 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT025N06；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AD5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.024349 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT025N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AM uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

文件：674.69 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT025N06；Package：TO-263-6L；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AM6 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：841.27 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT025N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AMA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters l Synchronous Rectification

文件：948.09 Kbytes 页数：6 Pages

GOFORD

谷峰半导体