丝印：GT040N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT040N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.05967 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT040N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT040N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.07 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT040N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT040N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.05967 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT040N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT040N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：938.07 Kbytes 页数：6 Pages

GOFORD

谷峰半导体