丝印：GT105N10；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：708.35 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：675.86 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：916.05 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04469 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.032329 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：708.35 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：675.86 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：916.05 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.04469 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT105N10；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GT105N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.032329 Mbytes 页数：6 Pages

GOFORD

谷峰半导体